Nonvolatile memory and erasing method

Details Nonvolatile memory and erasing method Nonvolatile memory and erasing method

2005-04-26

2005-04-26

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S040000, C257S295000, C257S298000, C257S431000

Reexamination Certificate

active

06885053

ABSTRACT:
There is provided a nonvolatile memory including memory cells each of which includes a storage element including a bistable molecular layer, wherein the bistable molecular layer contains a bistable molecule which brings about isomerization from a first isomer into a second isomer by injecting a hole and an electron into the bistable molecular layer, and brings about isomerization from the second isomer into the first isomer by irradiating the bistable molecular layer with erase light, and the memory is configured to irradiate the bistable molecular layers of all the memory cells with the erase light while applying an electric field to the bistable molecular layer of only a part of the memory cells that stores information to be held when erasing information stored in the rest of the memory cells.

REFERENCES:
patent: 6828685 (2004-12-01), Stasiak
Tsuyoshi Tsujioka, et al., “Organic bistable molecular memory using photochromic diarylethene,” Applied Physics Letters, vol. 83, No. 5, Aug. 2003, pp. 937-939.

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