Semiconductor and fabrication method thereof

Details Semiconductor and fabrication method thereof Semiconductor and fabrication method thereof

2005-01-11

2005-01-11

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S154000, C438S223000, C438S224000, C438S227000, C438S228000, C257S265000, C257S351000, C257S371000

Reexamination Certificate

active

06841430

ABSTRACT:
A semiconductor device with p-channel and n-channel field effect devices formed on a common substrate, where the drain and source regions of the n-channel field effect device are formed within a silicon epitaxial layer formed on a silicon layer germanium relax which is formed on a silicon germanium buffer layer with a graduated germanium concentration. Additionally, drain and source regions of the p-channel field effect device are formed within a silicon-germanium compound layer formed on the substrate and the silicon epitaxial cap layer formed on the silicon-germanium compound layer.

REFERENCES:
patent: 5847419 (1998-12-01), Imai et al.
patent: 6190975 (2001-02-01), Kubo et al.

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