Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2005-01-25

2005-01-25

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000

Reexamination Certificate

active

06847074

ABSTRACT:
A semiconductor memory device according to the present invention includes a memory cell capacitor for storing data thereon. The capacitor is made up of a first electrode connected to a contact plug, a second electrode and a capacitive insulating film interposed between the first and second electrodes. The first electrode includes a first barrier film in contact with the contact plug and a second barrier film, which is formed on the first barrier film and prevents the diffusion of oxygen. The second barrier film covers the upper and side faces of the first barrier film.

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patent: 1221220 (1999-06-01), None

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