Method to fabricate an intrinsic polycrystalline silicon film

Details Method to fabricate an intrinsic polycrystalline silicon film Method to fabricate an intrinsic polycrystalline silicon film

2005-04-19

2005-04-19

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S166000

Reexamination Certificate

active

06881652

ABSTRACT:
A thin film transistor using an intrinsic polycrystalline silicon film, the thin film transistor fabricated by forming an insulation layer on a substrate, forming a first amorphous silicon layer on the insulation layer, forming silicon nucleation sites on the first amorphous silicon layer; converting the first amorphous silicon layer into hemispherical grained silicon, forming a second amorphous silicon layer covering the hemispherical grained silicon, annealing the second amorphous silicon layer to convert the second amorphous silicon layer into a grained silicon film, patterning an oxide layer into a transistor gate oxide and leaving uncovered sections of the grained silicon on opposing sides of the transistor gate oxide, conductively doping the uncovered sections of the grained silicon and forming a patterned metal gate on the transistor gate oxide.

REFERENCES:
patent: 5418180 (1995-05-01), Brown
patent: 5486237 (1996-01-01), Sano et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5721171 (1998-02-01), Ping et al.
patent: 5893747 (1999-04-01), Yang
patent: 6013555 (2000-01-01), Yew et al.
patent: 6046083 (2000-04-01), Lin et al.
patent: 6049106 (2000-04-01), Forbes
patent: 6069053 (2000-05-01), Ping et al.
patent: 6204156 (2001-03-01), Ping
patent: 6383851 (2002-05-01), Ping
Singh et al., “Novel Method for the Formation of a Large Grained, Silicon Thin Films on Amorphous Surface”, J. Electrochem. Soc., vol. 145, No. 11, pp. 3963-6, 1998.

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