Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-09-13

2005-09-13

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06944048

ABSTRACT:
Blocks are connected to a read bit line. One block has MTJ elements which are connected to each other in series between the read bit line and a ground terminal. A MTJ elements are superposed on, e.g., a semiconductor substrate. A read bit line is arranged on the superposed MTJ elements. A write word line extending in a X-direction and a write bit line extending in a Y-direction are arranged in the vicinity of the MTJ elements in the block.

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