Method of fabricating a magneto-resistive random access...

Details Method of fabricating a magneto-resistive random access... Method of fabricating a magneto-resistive random access...

2005-01-11

2005-01-11

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S709000

Reexamination Certificate

active

06841484

ABSTRACT:
A method of etching a multi-layer magnetic stack (e.g., layers of cobalt-iron alloy (CoFe), ruthenium (Ru), platinum-manganese alloy (PtMn), and the like) of a magneto-resistive random access memory (MRAM) device is disclosed. Each layer of the multi-layer magnetic stack is etched using a process sequence including a plasma etch step followed by a plasma treatment step. The plasma treatment step uses a plasma comprising an inert gas to remove residues formed during the plasma etch step.

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