Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-17
2005-05-17
Sarkar, Asok Kumar (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S634000, C438S636000, C438S639000
Reexamination Certificate
active
06893958
ABSTRACT:
The present invention prevents cross-linking between multiple resists that are used in the fabrication of a semiconductor device. In order to prevent resists in close proximity or contact with one another from cross-linking, a non-reactive separation layer is disposed between the resists. The separation layer prevents incompatible components of the resists from reacting with one another. Forming the separation layer between the resists allows a resist located above the separation layer to be polymerized and patterned as desired without patterning another resist located below the separation layer. Methods of patterning multiple resists are also disclosed.
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Coursey Belford T.
Gilgen Brent D.
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