Method of forming isolation dummy fill structures

Details Method of forming isolation dummy fill structures Method of forming isolation dummy fill structures

2005-07-05

2005-07-05

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S737000, C438S738000, C438S744000

Reexamination Certificate

active

06913990

ABSTRACT:
A method of providing dummy fill structures to meet the strict requirements for planarizing MRAM (Magnetic Random Access Memory) and other semiconductor devices to gain silicon floor space and allow maximum use of wiring levels. The method deposits a sacrificial or dummy layer of dielectric material such as SiO2to form dummy fill structures prior to the planarization steps. The insulative dummy fill structures allow the use of less precise lithography and etching methods. The dummy fill structures provide support during the CMP process that planarizes the active devices prior to depositing another layer of SiO2and etching lines of metallization. Since the dummy structures are made of a dielectric rather than conductive materials, the risk of shorts between levels of metallization and between active devices and lines of metallization is reduced.

REFERENCES:
patent: 6717267 (2004-04-01), Kunikiyo

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