Plasma processing method

Details Plasma processing method Plasma processing method

2005-03-15

2005-03-15

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000

Reexamination Certificate

active

06867146

ABSTRACT:
A method of plasma-processing a silicon-based substrate provides a mirror-like etched surface of the substrate. A silicon wafer having a protective tape affixed to a circuit-formed side of the wafer is mounted on a mounting unit disposed within a process chamber of a plasma processing apparatus while the protective tape contacts on the mounting unit. The surface of the silicon wafer is kept at a temperature of 40° C. or above when the surface of the substrate is etched by plasma generated by plasma discharge in plasma-generating gas including fluorine-containing gas fed into the process chamber. This suppressing adhesion and accumulation of a reaction product of the fluorine-containing gas with respect to the surface to be etched, and consequently, provides the surface with uniform etching.

REFERENCES:
patent: 5443689 (1995-08-01), Kimura et al.
patent: 5536364 (1996-07-01), Yoshida et al.
patent: 5556500 (1996-09-01), Hasegawa et al.
patent: 5686363 (1997-11-01), Tabara
patent: 5770098 (1998-06-01), Araki et al.
patent: 5843226 (1998-12-01), Zhao et al.
patent: 6239036 (2001-05-01), Arita et al.
patent: 6277752 (2001-08-01), Chen
patent: 6322714 (2001-11-01), Nallan et al.
patent: 6333271 (2001-12-01), Chiu et al.
patent: 6486069 (2002-11-01), Marks et al.
patent: 6670276 (2003-12-01), Suemasa et al.
patent: 2000-058521 (2000-02-01), None
patent: 2000-133639 (2000-05-01), None

Affiliated with

Also associated with

Rating

Plasma processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3377893