Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-12
2005-07-12
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S001000
Reexamination Certificate
active
06916740
ABSTRACT:
A method is provided for forming smooth polycrystalline silicon electrodes for molecular electronic devices. The method comprises: depositing a silicon layer in an amorphous form; forming a native oxide on a surface of the amorphous silicon layer at a temperature between room temperature to 500° C.; and converting the amorphous silicon to polycrystalline silicon by heat-treating at a temperature in a range of 600° to 800° C. for a period of time in a range of 1 minute to 24 hrs, with higher temperatures associated with shorter times, in an inert atmosphere. The method converts the amorphous form of silicon to the higher conductivity polycrystalline form, while retaining the smoothness associated with the amorphous form.
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Booth Richard A.
Hewlett--Packard Development Company, L.P.
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