Photolithographic production of trenches in a substrate

Details Photolithographic production of trenches in a substrate Photolithographic production of trenches in a substrate

2005-09-20

2005-09-20

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S689000, C438S672000, C438S700000

Reexamination Certificate

active

06946390

ABSTRACT:
A method for the manufacture of micro metallic structures having high aspect ratios is provided, wherein said method comprises the step of photolithographically producing trenches in a substrate. Polymer chains are formed on the inner surface of said trenches. Thus, the critical dimensions in the photolithographical process can be reduced to any dimension down to zero. The method is quite general in its application to any process that includes the definition of a critical dimension by photolithography. Immediate applications are the reduction of the read and write dimensions in thin film magnetic heads, but the invention can be used in any technology where the manufacture of microstructures having a high aspect ratio is of interest.

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MicroElectronc Engineering, “Sensitivity-Enhanced Dry Development Process for VUV and EUV Lithography Using Graft-Polymerization”, 1996, pp. 287-290.

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