Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

2005-05-17

2005-05-17

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257S778000

Reexamination Certificate

active

06894389

ABSTRACT:
In a method for manufacturing a semiconductor device according to the present invention, a back surface on a silicon wafer is ground and, after that, mirror-finished. A breakable layer on a back surface is removed. A silicon wafer is formed in the silicon wafer has a back surface in which a crystalline layer which is disposed innermore than the breakable layer is exposed. Bumps are formed on predetermined positions on a surface on the silicon wafer. By doing this, it is possible to provide a semiconductor device and a method for manufacturing therefore in which it is possible to prevent a crack from being formed on the semiconductor base board caused by a stress in a process for forming the bumps. As a result, it is possible to improve the production yield in the process for forming the bumps. Also, it is possible to realize more integration in the semiconductor device by a lower production cost.

REFERENCES:
patent: 5273940 (1993-12-01), Sanders
patent: 6091141 (2000-07-01), Heo
patent: 6506681 (2003-01-01), Grigg et al.

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