Storage cell field and method of producing the same

Details Storage cell field and method of producing the same Storage cell field and method of producing the same

2005-03-29

2005-03-29

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21653, C257SE27093, C438S222000, C438S245000, C438S481000

Reexamination Certificate

active

06873000

ABSTRACT:
A storage cell field has a plurality of storage cells formed in a substrate of a first doping type, said storage cells comprising a trench capacitor arranged in said substrate and a selection transistor associated with said trench capacitor and provided with a transistor body which is arranged in said substrate. An implantation having an increased dopant concentration of the first doping type is provided in said substrate. This implantation prevents space-charge zones, which are located at the trench capacitors and which are caused in predetermined storage states of said trench capacitors, from constricting a substrate region, which is available for applying a predetermined potential to the transistor bodies, in such a way that said predetermined potential cannot be applied.

REFERENCES:
patent: 4906591 (1990-03-01), Okumura
patent: 6326262 (2001-12-01), Temmler et al.
patent: 38 41 927 (1989-06-01), None
patent: 38 44 388 (1989-08-01), None
patent: 2 215 913 (1989-09-01), None
D. Widmann et al.: “Technologie hochintegrierter Schaltungen” [technology of highly integrated circuits],Springer Verlag, Berlin, 2nded., 1996, pp. 290-293, 334-349.

Affiliated with

Also associated with

Rating

Storage cell field and method of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Storage cell field and method of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Storage cell field and method of producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3375105