Semiconductor device with structure for improving breakdown...

Details Semiconductor device with structure for improving breakdown... Semiconductor device with structure for improving breakdown...

2005-07-26

2005-07-26

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S168000, C257S487000, C257S409000

Reexamination Certificate

active

06921945

ABSTRACT:
A semiconductor layer (10) provided on a BOX (buried oxide) layer (2) includes a first P-type region (11), an N+-type region (12), and an N−type region (13) which together form a diode. A plurality of second P-type regions (14) are provided on a bottom part of the semiconductor layer (10). A plurality of insulating oxide films (21) are interposed between the plurality of second P-type regions (14). When the diode is in a reverse-biased state, the second P-type region (14) directly below the N+-type region (12) is approximately the same in potential as the N+-type region (12). The second P-type region (14) will be lower in potential relative to this second P-type region (14) directly below the N+-type region (12), as the second P-type region (14) gets nearer to the first P-type region (11). Electric field concentration can thus be relaxed at an interface between the semiconductor layer (10) and the BOX layer (2), whereby improvement in breakdown voltage of the diode is realized.

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Hideyuki Funaki, et al., “New 1200V Mosfet Structure on SOI with SIPOS Shielding Layer”, Proceedings of 1998 International Symposium on Power Semiconductor Devices & ICs, pp. 25-28.

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