Fabrication of pure and modified Ta2O5 thin film with...

Details Fabrication of pure and modified Ta2O5 thin film with... Fabrication of pure and modified Ta2O5 thin film with...

2005-07-19

2005-07-19

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S240000, C438S780000, C438S781000, C438S782000, C438S785000

Reexamination Certificate

active

06919283

ABSTRACT:
This invention is directed to pure and modified Ta2O5thin films deposited on suitable substrate and methods for making these Ta2O5thin films. These Ta2O5thin films exhibit superior properties for microwave communication, dynamic random access memory and integrated electronic applications. The Ta2O5thin films perform well in these types of technologies due to the Ta2O5thin film component which allows for high dielectric constants, low dielectric loss, and good temperature and frequency stability, thus making them particularly useful in high frequency microwave applications.

REFERENCES:
patent: 5468514 (1995-11-01), Tomita
patent: 6133086 (2000-10-01), Huang et al.

Affiliated with

Also associated with

Rating

Fabrication of pure and modified Ta2O5 thin film with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of pure and modified Ta2O5 thin film with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of pure and modified Ta2O5 thin film with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3373368