Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-13
2005-09-13
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S356000
Reexamination Certificate
active
06943412
ABSTRACT:
A semiconductor integrated circuit is provided, which has an improved withstanding voltage for electrostatic breakdown at the time of electrostatic discharge by the charged device model, in the case of protecting a MOS capacitor provided at the input side of the internal circuit. The semiconductor integrated circuit comprises an internal circuit20for inputting an external signal, an internal circuit MOS capacitor16, one end of which is connected to a power source wire10for supplying the source voltage and the other end of which is connected to a ground potential wire12for supplying the ground potential; a ground terminal14to which one end of the ground potential wire is connected; an electrostatic protection element18connected in parallel with the MOS capacitor16between the ground terminal14and the MOS capacitor, wherein the MOS capacitor and the electrostatic protection element are connected between the power source wire and the ground potential wire such that the wire resistance R1of the ground potential wire between the ground terminal and the connection point with one end of the electrostatic protection element is larger than the wire resistance R2of the ground potential wire between the connection point with one end of the electrostatic protection element and the connection point with one end of the MOS capacitor.
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