Magneto resistive storage device having a magnetic field...

Details Magneto resistive storage device having a magnetic field... Magneto resistive storage device having a magnetic field...

2005-07-19

2005-07-19

Wilson, Christian (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000

Reexamination Certificate

active

06919594

ABSTRACT:
An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.

REFERENCES:
patent: 6127053 (2000-10-01), Lin et al.
patent: 6292389 (2001-09-01), Chen et al.
patent: 6509621 (2003-01-01), Nakao
patent: 6794695 (2004-09-01), Sharma et al.

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