Semiconductor device having gate electrode of stacked...

Details Semiconductor device having gate electrode of stacked... Semiconductor device having gate electrode of stacked...

2005-05-24

2005-05-24

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S387000, C257S412000, C257S413000, C438S303000, C438S585000, C438S587000, C438S588000

Reexamination Certificate

active

06897534

ABSTRACT:
The present invention provides a semiconductor device, comprising a gate electrode of a stacked structure consisting of a polysilicon layer and a metal layer, a cap insulating film formed on the gate electrode, and a gate side wall film formed on the side wall of the gate electrode. The cap insulating film consists of an insulating film containing a silicon oxide-based layer and a silicon nitride layer and serves to protect the upper surface of the gate electrode. Further, the gate side wall film consists of an insulating film containing a silicon nitride film and a silicon oxide film and serves to protect the side surface of the gate electrode.

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