Low temperature formation of backside ohmic contacts for...

Details Low temperature formation of backside ohmic contacts for... Low temperature formation of backside ohmic contacts for...

2005-04-26

2005-04-26

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Electron emitter manufacture

C257S077000

Reexamination Certificate

active

06884644

ABSTRACT:
The invention comprises a method for forming a metal-semiconductor ohmic contact (18) for use in a semiconductor device (10) having a plurality of epitaxial layers (14a-c) wherein the ohmic contact (18) is preferably formed after deposition of the epitaxial layers (14a-c). The invention also comprises a semiconductor device comprising a plurality of epitaxial layers and an ohmic contact.

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