Method of fabricating CMOS thin film transistor

Details Method of fabricating CMOS thin film transistor Method of fabricating CMOS thin film transistor

2005-03-01

2005-03-01

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S153000

Reexamination Certificate

active

06861298

ABSTRACT:
A method of fabricating a CMOS thin film transistor. First and second active layers are formed at first and second transistor areas of a transparent substrate. A gate insulating film is formed at middle portions of the first and second active layers while the sides of each are exposed. Each exposed side is ion-doped with a first conductive impurity at a first energy and at a first concentration using the first and second gate electrodes as mask, thus forming first and second high-concentrated areas. A photoresist pattern that covers the first transistor area is formed on the transparent substrate. The second high-concentrated impurity area is ion-doped with a second conductive impurity, at a second energy that is greater than the first energy and at a second concentration that is greater than the first concentration, to form a third high-concentrated impurity area that is counter-doped.

REFERENCES:
patent: 6004831 (1999-12-01), Yamazaki et al.
patent: 6077730 (2000-06-01), Lee et al.
patent: 6150202 (2000-11-01), Imai et al.
patent: 6300174 (2001-10-01), Bae
patent: 6303963 (2001-10-01), Ohtani et al.

Affiliated with

Also associated with

Rating

Method of fabricating CMOS thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating CMOS thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating CMOS thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3371752