Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-12
2005-04-12
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S592000, C438S595000, C438S596000, C438S652000, C438S649000, C438S664000
Reexamination Certificate
active
06878623
ABSTRACT:
A gate structure having associated (LDD) regions and source and drain is formed as is conventional. A first oxide spacer, for example, is formed along the sidewalls of the gate structure. A layer of metal such as titanium is then deposited over the surface of the gate structure. Second sidewall spacers are formed covering the metal over the first sidewall spacer and covering the metal over isolation regions. A layer of polysilicon is deposited over the surface of the gate structure. A rapid thermal annealing (RTA) is performed causing the metal to react with both the silicon in the junction below the metal and the polysilicon above the metal forming a metal silicide. Metal along the sidewalls between the first and second sidewall spacers and over the isolation regions does not react and is etched away. By providing an additional source of silicon in the polysilicon layer above the metal, a thicker silicide is achieved.
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Cha Randall Cher Liang
Chan Lap
See Alex
Tan Cheng Cheh
Chartered Semiconductor Manufacturing Ltd.
Guerrero Maria F.
Pike Rosemary L. S.
Saile George D.
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