Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2005-09-06
2005-09-06
Cuneo, Kamand (Department: 2827)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S795000, C438S106000, C438S118000, C438S119000, C438S628000
Reexamination Certificate
active
06940180
ABSTRACT:
A semiconductor device connecting structure for connecting a semiconductor IC7onto a substrate13.A bonding layer31is placed between the substrate13and the semiconductor IC7to accomplish adhesion therein. This bonding layer includes an ACF32as a bonding material for joining said semiconductor IC7onto said substrate13and a space33formed within the ACF32.Even if the IC7deforms due to heat or the like, the deformation is absorbed by the space a33,whereupon the connecting conditions of bumps28, 29can not be unstable.
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Communication from corresponding Korean counterpart application.
Cuneo Kamand
Harness & Dickey & Pierce P.L.C.
Mitchell James
Seiko Epson Corporation
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