Semiconductor devices containing a discontinuous cap layer...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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C257S638000, C257S642000, C438S629000, C438S725000

Reexamination Certificate

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06943451

ABSTRACT:
Novel semiconductor devices containing a discontinuous cap layer and possessing a relatively low dielectric constant are provide herein. The novel semiconductor devices includes at least a substrate, a first dielectric layer applied on at least a portion of the substrate, a first set of openings formed through the dielectric layer to expose the surface of the substrate so that a conductive material deposited within and filling the openings provides a first set of electrical contact conductive elements and a discontinuous layer of cap material covering at least the top of the conductive elements to provide a first set of discontinuous cap elements. Methods for forming the semiconductor devices are also provided.

REFERENCES:
patent: 5968333 (1999-10-01), Nogami et al.
patent: 5981000 (1999-11-01), Grill et al.
patent: 6051869 (2000-04-01), Pan et al.
patent: 6274499 (2001-08-01), Gupta et al.
patent: 6281127 (2001-08-01), Shue
patent: 6346747 (2002-02-01), Grill et al.
patent: 6417537 (2002-07-01), Yang et al.
patent: 6448655 (2002-09-01), Babich et al.
patent: 6475810 (2002-11-01), Zhou et al.
patent: 6524962 (2003-02-01), Chen et al.
Merriam-Webster's Collegiate Dictionary 10thEdition, 2001, pp. 250 and 330.

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