Method of etching silicon nitride film and method of...

Details Method of etching silicon nitride film and method of... Method of etching silicon nitride film and method of...

2005-05-17

2005-05-17

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C714S723000, C714S724000, C714S725000, C714S743000, C714S744000

Reexamination Certificate

active

06893973

ABSTRACT:
Provided is a method of etching a silicon nitride film, which comprises subjecting the silicon nitride film located on copper to dry etching using a mixture of fluorocarbon gas and an inert gas as the reaction gas, the fluorocarbon gas containing CF4and CHF3supplied at flow rates in a ratio of 3:7 to 0:1 or contains CF4and CH2F2supplied at flow rates in a ratio of 2.5:1 to 0:1, thereby suppressing the formation of copper fluoride.

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