Method of fabricating a narrow polysilicon line

Details Method of fabricating a narrow polysilicon line Method of fabricating a narrow polysilicon line

2005-04-26

2005-04-26

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S704000, C438S719000, C438S723000, C438S753000

Reexamination Certificate

active

06884722

ABSTRACT:
Disclosed is a method of fabricating a polysilicon line, comprising: forming a patterned hard mask layer over a polysilicon layer; patterning the polysilicon layer to provide a hard mask-capped polysilicon line having a first width; and isotropically removing portions of the polysilicon line to a second width.

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