Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2005-01-18
2005-01-18
Lebentritt, Michael S. (Department: 2824)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S486000, C438S149000, C438S160000
Reexamination Certificate
active
06844249
ABSTRACT:
The invention relates to a method for manufacturing a semiconductor device, and it is an object of the invention to form a semiconductor area formed in island-like patterns as a single crystal or an area which can be regarded as a single crystal, and to simultaneously achieve a laminated structure by which various characteristics of TFTs can be stabilized, wherein an insulation film is formed on a glass substrate, and island-like semiconductor layer is formed thereon. A laser beam passed through a cylindrical lens is made into a linear laser beam and irradiated onto the island-like semiconductor layer by an optical system. The island-like semiconductor layer is subjected to two components, one of which is a direct laser beam component passing through the cylindrical lens and being irradiated directly onto the island-like semiconductor layer, and the other of which is a diffused laser beam component transmitting an insulation film and a substrate, being reflected by a reflection plate, and again transmitting the substrate and insulation film and being irradiated onto the island-like semiconductor laser.
REFERENCES:
patent: 5612251 (1997-03-01), Lee
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5767003 (1998-06-01), Noguchi
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 6020224 (2000-02-01), Shimogaichi et al.
patent: 6246524 (2001-06-01), Tanaka
patent: 6248606 (2001-06-01), Ino et al.
patent: 6380009 (2002-04-01), Battersby
patent: 6426245 (2002-07-01), Kawasaki et al.
patent: 6624013 (2003-09-01), Kawasaki et al.
patent: 07-130652 (1995-05-01), None
patent: 08-228006 (1996-09-01), None
K. Shimizu, O. Sugiura, M. Matsumura, “High Mobility Poly-Si Thin Film Transistors Fabricated by a Novel Excimer Laser Crystallization Method”, IEEE Transactions on Electron Devices, vol., 40, No. 1, pp. 112-117, Jan., 1993.
Kasahara Kenji
Kawasaki Ritsuko
Yamazaki Shunpei
Costellia Jeffrey L.
Lebentritt Michael S.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Smith Brad
LandOfFree
Method for manufacturing a semiconductor device using laser... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a semiconductor device using laser..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device using laser... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3368237