Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-19
2005-04-19
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S353000, C257S401000, C257S347000, C257S621000, C257S748000, C257S750000
Reexamination Certificate
active
06882010
ABSTRACT:
The invention includes three-dimensional TFT based stacked CMOS inverters. Particular inverters can have a PFET device stacked over an NFET device. The PFET device can be a semiconductor-on-insulator thin film transistor construction, and can be formed over a conventional substrate (such as a monocrystalline silicon wafer) or a non-conventional substrate (such as one or more of glass, aluminum oxide, silicon dioxide, metal and plastic). The thin film of semiconductor material can comprise both silicon and germanium. Further, the thin film can contain two different layers. A first of the two layers can have silicon and germanium present in a relaxed crystalline lattice, and a second of the two layers can be a strained crystalline lattice of either silicon alone, or silicon in combination with germanium. The invention also includes computer systems utilizing such CMOS inverters.
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Flynn Nathan J.
Forde Remmon R.
Micro)n Technology, Inc.
Wells St. John P.S.
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