MOS transistor and method of forming the transistor with a...

Details MOS transistor and method of forming the transistor with a... MOS transistor and method of forming the transistor with a...

2002-12-10

2004-11-16

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S077000, C257S192000, C257S194000, C438S285000

Reexamination Certificate

active

06818938

ABSTRACT:

BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1
is a cross-sectional view illustrating an example of a PMOS transistor
100
in accordance with the present invention.
FIG. 2
is a cross-sectional view illustrating an example of a PMOS transistor
200
in accordance with an alternate embodiment of the present invention.
FIGS. 3A-3E
are a series of cross-sectional views illustrating an example of a method of forming a PMOS transistor in accordance with the present invention.
FIGS. 4A-4D
are cross-sectional views illustrating an example of a method of forming a PMOS transistor in accordance with an alternate embodiment of the present invention.


REFERENCES:
patent: 6190975 (2001-02-01), Kubo et al.
patent: 6399970 (2002-06-01), Kubo et al.
patent: 6472685 (2002-10-01), Takagi
patent: 6492216 (2002-12-01), Yeo et al.
patent: 6597016 (2003-07-01), Yuki et al.

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