Semiconductor PMD layer dielectric

Details Semiconductor PMD layer dielectric Semiconductor PMD layer dielectric

2003-05-29

2004-12-28

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S637000, C257S758000, C257S760000

Reexamination Certificate

active

06835648

ABSTRACT:

BACKGROUND OF THE INVENTION
This invention relates to the improvement of the dielectric used in the poly-metal dielectric layer of a semiconductor device.


REFERENCES:
patent: 6165916 (2000-12-01), Muraoka et al.
patent: 6706635 (2004-03-01), Khan et al.

Affiliated with

Also associated with

Rating

Semiconductor PMD layer dielectric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor PMD layer dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor PMD layer dielectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3317411