Using sonic energy in connection with laser-assisted direct...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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C216S054000

Reexamination Certificate

active

06743740

ABSTRACT:

BACKGROUND
This invention relates generally to the manufacture of semiconductor integrated circuits.
It is generally desirable to transfer a pattern repeatedly to a semiconductor wafer in the course of semiconductor manufacturing. Conventionally, this is done using processes involving lithography and etching. However, lithography and etching may tend to be relatively expensive and are limited in their resolution or throughput. Thus, there has been a demand for better ways to transfer patterns repeatedly to semiconductor wafers.
One such technique is called laser-assisted direct imprint (LADI). In this process, a pattern is formed on a quartz mold and the quartz mold with the pattern is pressed against a silicon substrate. An excimer laser irradiates the quartz mold. Due to the irradiation of the quartz mold, the upper surface of the silicon substrate is melted. As a result, the pattern on the mold is transferred to the molten silicon over a relatively short time period, generally less than 250 nanoseconds. After the silicon has solidified, the mold and substrate are separated.
LADI has been used to transfer patterns to structures with resolutions better than 10 nanometers. See Chou, Stephen Y., Keimel, Chris, and Gu, Jian, “Ultrafast and direct imprint of nanostructures in silicon,” Nature, 835-837 (2002).
While the techniques of laser-assisted direct imprint show considerable promise, there is still a need for better ways to transfer the pattern to the molten silicon.


REFERENCES:
patent: 2002/0042027 (2002-04-01), Chou et al.
patent: 2003/0062334 (2003-04-01), Lee et al.
patent: 2003/0071016 (2003-04-01), Shih et al.
patent: 1003078 (2000-05-01), None
Michel Freemantle, Nanolithography, Nano structures in Nanoseconds, Ultrafast technique imprints patterns directly in silicon chip, Chemical & Engineering News, vol. 80, No. 25, Jun. 24, 2002.*
Chou et al., Ultrafast and direct imprint of nanostructures in silicon, Nature, vol. 417, Pp. 835-837, Jun. 2002.*
Chou et al., Ultrafast and direct imprint of nanostructures in silicon, Nature, vol. 417, Pp. 835-837, Jun. 2002.*
Wang et al., Direct nanoimprint of submicron light-emitting structures, Applied Physics Letters, vol. 75, No. 15, Pp. 2767-2769, Sep. 1999.*
Chou et al., “Ultrafast and Direct Imprint of Nanostructures in Silicon”, Nature, vol. 417, pp. 835-837, Jun. 20, 2002.

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