Floating gate memory device with homogeneous oxynitride...

Details Floating gate memory device with homogeneous oxynitride... Floating gate memory device with homogeneous oxynitride...

2002-08-30

2004-12-07

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C438S257000

Reexamination Certificate

active

06828623

ABSTRACT:

TECHNICAL FIELD
The present invention relates to the field of microelectronic integrated circuits. Specifically, the present invention relates to a memory device including a homogeneous oxynitride tunneling dielectric layer.
BACKGROUND ART
A flash or block erase memory (flash memory), such as, Electrically Erasable Programmable Read-Only Memory (Flash EEPROM), includes an array of cells which can be independently programmed and read. The size of each cell and thereby the memory as a whole are made smaller by eliminating the independent nature of each of the cells. As such, all of the cells are erased together as a block.
A memory of this type includes individual Metal-Oxide Semiconductor (MOS) memory cells that are field effect transistors (FETs). Each FET, or flash, memory cell includes a source, drain, floating gate and control gate to which various voltages are applied to program the cell with a binary 1 or 0, or erase all of the cells as a block. The flash memory cell provides for nonvolatile data storage.
Prior Art
FIG. 1
illustrates a typical configuration of a flash memory cell
100
. The transistor typically consists of a thin, high-quality tunnel oxide layer
140
sandwiched between a conducting polysilicon floating gate
130
and a crystalline silicon semiconductor substrate
170
. The tunnel oxide layer is typically composed of silicon oxide (Si
x
O
y
). The substrate
170
includes a source region
150
and a drain region
160
that can be separated by an underlying channel region. A control gate
110
is provided adjacent to the floating gate
130
, and is separated by an interpoly dielectric
120
. Typically, the interpoly, dielectric
120
can be composed of an oxide-nitride-oxide (ONO) structure.
The flash memory cell
100
stores data by holding charge within the floating gate
130
. In a write operation, charge can be placed on the floating gate
130
through hot electron injection, or Fowler-Nordheim (F-N) tunneling. In addition, F-N tunneling can be typically used for erasing the flash memory cell
100
through the removal of charge on the floating gate
130
.
As flash memory technology progresses, the density of the memory cells, as well as, the speed of the flash memory increases. However, the continued reduction in size of the conventional floating gate flash memory cell
100
has been essentially limited by two primary effects: first, a minimum thickness of the tunnel oxide dielectric
140
that limits capacitance of the flash memory cell
100
; and second, the inability to reduce the higher operating voltages affecting the flash memory cell
100
.
First, in order to improve short channel effects and to increase core gain (Id/W), the unit area capacitance of the tunnel oxide dielectric
140
could be increased. Correspondingly, a higher unit area capacitance also leads to better retention of charge within the floating gate
130
.
In the prior art, the thickness of the tunnel oxide dielectric
140
between the floating gate
130
and the substrate
170
can be reduced to obtain higher unit area capacitance. Unit area capacitance is inversely related to the thickness of the tunnel oxide dielectric
140
. However, a thinner tunnel oxide dielectric
140
also leads to an increase in tunneling probability. This eventually leads to increased charge loss in the floating gate
130
over the lifetime of the flash memory device
100
. As a result, a minimum thickness of approximately 10 nanometers (nm) is necessary to negate long term reliability degradation due to increased probability of charge loss due to thinner and thinner tunnel oxide layers
140
composed of silicon oxide. Thus, unit area capacitance of the tunnel oxide dielectric
140
is limited by the minimum thickness of the tunnel oxide dielectric
140
.
Second, as the flash memory cell
100
becomes smaller and smaller, a corresponding reduction in operating voltage over the flash memory cell
100
must occur in order to maintain long-term longevity of the flash memory cell
100
. A reduction in physical size of the flash memory cell
100
must be accompanied by a reduction in operating voltages to maintain relatively proportional electrical fields within the flash memory cell
100
. For example, subjecting the smaller flash memory device to the same operating voltages as the previously larger device would result in quicker breakdown of the device in the channel region across the source region
150
and the drain region
160
.
For example, programming and erasing of the flash memory device can involve electron injection by either F-N tunneling or channel hot electron (CHE) injection. Both F-N tunneling and CUE injection are controlled by the barrier height of the tunnel oxide dielectric
140
. As such, in order to reduce operating voltages, a barrier energy of the tunnel oxide dielectric
140
must be reduced.
Conventionally, the tunnel oxide dielectric
140
that is composed of silicon oxide gives a very high barrier energy. Prior Art
FIG. 2
is a diagram illustrating the electron and hole barrier energies for silicon oxide tunnel oxide dielectric
140
having a dielectric constant &xgr;
oxide
of 3.9. As illustrated, the barrier height for electron movement is approximately 3.15 electron volts (eV). The high operating voltages required for electrons to overcome the barrier height of 3.15 eV precludes continued reduction in the size of the flash memory cell
100
. In addition, the barrier height for hole movement is approximately 5.0 eV, which is prohibitively high for any hole movement under conventional operating voltages. As a result, hole movement in the prior art is not a factor in any programming or erasing scheme.
Thus, a need exists for a flash memory cell with higher unit area capacitance for better charge retention, short channel effects, and increased core gain, while enjoying the benefits of reduction in size of the flash memory cell. A further need exists for a flash memory cell adapted to operate under lower voltages while simultaneously reducing the size of the flash memory cell.
DISCLOSURE OF THE INVENTION
The present invention provides a flash memory cell with higher unit area capacitance for better charge retention, short channel effects, and increased core gain, along with a reduction in size of the flash memory cell. Also, the present invention provides for a flash memory cell adapted to operate under lower voltages necessary for operation with a reduction in size of the flash memory cell.
Specifically, one embodiment of the present invention discloses a flash memory cell that comprises a tunnel oxide dielectric layer comprised of homogeneous oxynitride. The tunnel oxide dielectric layer separates a floating gate from a channel region that is formed between a source region and a drain region in a substrate. The flash memory cell further comprises a dielectric layer, such as an oxide-nitride-oxide (ONO) layer, that separates a control gate from the floating gate.
By varying the oxygen and nitrogen content in the homogeneous oxynitride, the flash memory cell can benefit from an increase in the dielectric constant, which leads to higher unit area capacitance for better charge retention in the floating gate. Also, the use of homogeneous oxynitride leads to lowered barrier heights in the tunnel oxide dielectric layer which can allow for reduced operating voltages.
The homogeneity of the oxynitride is due to the uniform distribution of nitride within the tunnel oxide dielectric layer between the channel region and the floating gate. In one embodiment, the homogenous oxynitride is a defect free silicon nitride.
Moreover, homogenous oxynitride is associated with lowered hole barrier height which enables a more efficient erasure scheme. For example, with silicon nitride, the hole barrier height can be reduced to 3.5 eV, from the 5.0 eV associated with Fowler-Nordheim (F-N) tunneling, thereby supporting source-side channel hot hole injection (SSCHHI) erasing in the flash memory cell. The SSCHHI erasing scheme can be implemented at much lower voltages than the F-N erasing scheme.


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