Patent
1990-04-13
1991-04-02
James, Andrew J.
357 4, 357 16, 357 30, 357 61, H01L 3300, H01L 2712, H01L 4902, H01L 4500
Patent
active
050050575
ABSTRACT:
A blue LED which includes a light-emitting layer having a p-n junction makes use of the superlattice structure being formed of a plurality of BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers which are alternately stacked, with the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers having a zinc blende type structure, or else makes use of a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1 and x+y.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure.
REFERENCES:
patent: 4213781 (1980-07-01), Noreika et al.
patent: 4841531 (1989-06-01), Kondow et al.
patent: 4916496 (1990-04-01), Tomomura et al.
patent: 4918497 (1990-04-01), Edmond
Semiconductor Lasers and Heterojunction LED's, 1977, Academic Press, Inc., H. Kressel and J. K. Butler, pp. 486, 487.
Appl. Phys. Left. vol. 43, pp. 1034-1036, Dec. 1983, H. Ishigro, et al, "High efficient GaAIAs light-emitting diodes of 660 nm with a double heterostructure on a GaAIAs substrate".
Electronics Letters, vol. 23, pp. 134-136, 1987, K. Iga, et al "Microcavity GaAIAs/GaAs Surface-Emitting Laser with I.sub.th =6 mA".
Hatano Ako
Izumiya Toshihide
Ohba Yasuo
James Andrew J.
Kabushiki Kaisha Toshiba
Kim Daniel
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