Non-volatile random access memory

Details Non-volatile random access memory Non-volatile random access memory

1996-03-14

1998-01-13

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 257300, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057082847

ABSTRACT:
A non-volatile random access memory comprises a memory cell including: a MOS transistor having a gate insulation film formed on a semiconductor substrate, a gate electrode, and a pair of impurity diffusion layers; and an MFS transistor having at least a bottom gate electrode, a ferroelectric film, a top electrode, and a pair of impurity diffusion layers, one of the impurity diffusion layers of the MFS transistor being shared with the MOS transistor and connected to a portion of the bottom gate electrode; wherein the MOS transistor is connected to a bit line and a word line, and the MFS transistor is connected to a drive line and a common source line.

REFERENCES:
patent: 4888630 (1989-12-01), Paterson
patent: 5046043 (1991-09-01), Miller et al.
patent: 5229309 (1993-07-01), Kato
patent: 5300799 (1994-04-01), Nakamura et al.
patent: 5303182 (1994-04-01), Nakao et al.
patent: 5416735 (1995-05-01), Onishi et al.
patent: 5440173 (1995-08-01), Evans, Jr. et al.
patent: 5495117 (1996-02-01), Larson
patent: 5498888 (1996-03-01), Ozawa
patent: 5559733 (1996-09-01), McMillan et al.

Affiliated with

Also associated with

Rating

Non-volatile random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-328977