Semiconductor device including a lateral-type transistor

Details Semiconductor device including a lateral-type transistor Semiconductor device including a lateral-type transistor

1994-11-21

1996-04-16

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

055085504

ABSTRACT:
A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.

REFERENCES:
patent: 4314267 (1982-02-01), Bergeron et al.
patent: 4609931 (1986-09-01), Koike
patent: 4612629 (1986-09-01), Harari
patent: 4947192 (1990-08-01), Hawkins et al.
patent: 5075250 (1991-12-01), Hawkins et al.

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