Structure of chalcogenide memory element

Details Structure of chalcogenide memory element Structure of chalcogenide memory element

2002-06-21

2004-03-16

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S798000, C438S257000, C438S800000

Reexamination Certificate

active

06707087

ABSTRACT:

BACKGROUND OF THE DISCLOSURE
As computer and other electrical equipment continue to drop in price, the manufacturers of storage devices, such as memory devices and hard drives, are forced to lower the cost of their components. At the same time, computer, video game, television and other electrical device markets are requiring increasingly larger amounts of memory to store images, photographs, videos, movies, music and other storage intensive data. Thus, besides reducing cost, manufacturers of storage devices must also increase the storage density of their devices. This trend of increasing memory storage density while reducing cost required to create the storage has been on-going for many years, and even optical storage such as CD-ROM, CD-R, CD-R/W, DVD, and DVD-R variants are being challenged by device size limitations and cost. There is accordingly a need for economical, high capacity memory structures.


REFERENCES:
patent: 4792841 (1988-12-01), Nagasawa et al.
patent: 5311465 (1994-05-01), Mori et al.
patent: 5406509 (1995-04-01), Ovshinsky et al.
patent: 5625220 (1997-04-01), Liu et al.
patent: 5714768 (1998-02-01), Ovshinsky et al.
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5835396 (1998-11-01), Zhang
patent: 5926415 (1999-07-01), Shin
patent: 5978257 (1999-11-01), Zhu et al.
patent: 6002607 (1999-12-01), Dvir
patent: 6031287 (2000-02-01), Harshfield
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6097625 (2000-08-01), Scheuerlein
patent: 6185121 (2001-02-01), O'Neill
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6236590 (2001-05-01), Bhattacharyya et al.
patent: 6284643 (2001-09-01), Reinberg
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6501111 (2002-12-01), Lowrey
patent: 6531373 (2003-03-01), Gill et al.
patent: 2003/0211732 (2003-11-01), Chiang

Affiliated with

Also associated with

Rating

Structure of chalcogenide memory element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure of chalcogenide memory element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of chalcogenide memory element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3272504