Three dimensional FAMOS memory devices

Details Three dimensional FAMOS memory devices Three dimensional FAMOS memory devices

1994-09-27

1996-04-16

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257322, 257330, H01L 29788

Patent

active

055085440

ABSTRACT:
Memory cell transistors are provided in which column structures (12a, 14a) are formed at the face of a semiconductor substrate (10). Floating gates (46) and control gates (52) are formed adjacent to the column structures (12a, 14a). The floating gates (46) and control gates (52) are insulatively disposed by gate oxide layer (42) and insulating layer (50). Source regions (36) are implanted in the semiconductor substrate. Drain regions (38) are also implanted in the column structures (12a, 14a).

REFERENCES:
patent: 4774556 (1988-09-01), Fujii
patent: 5051795 (1991-09-01), Gill et al.
patent: 5071782 (1991-12-01), Moni
patent: 5338953 (1994-08-01), Wake

Affiliated with

Also associated with

Rating

Three dimensional FAMOS memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three dimensional FAMOS memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three dimensional FAMOS memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-327226