Random access memory device with trench-type one-transistor memo

Details Random access memory device with trench-type one-transistor memo Random access memory device with trench-type one-transistor memo

1993-09-20

1996-04-16

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257304, 257332, 257402, H01L 27108

Patent

active

055085415

ABSTRACT:
A MOS random access memory device includes a semiconductor substrate having a trench formed therein, and an array of memory cells on the substrate. Each of the memory cells includes a 1-bit data-storage capacitor and a transfer-gate MOS transistor. The capacitor includes an insulated layer buried in the trench, which serves as a storage node. An island-shaped semiconductor layer covers the storage-node layer at least partially on the substrate, and is coupled thereto. The transistor has a source and a drain defining a channel region therebetween in the substrate, and an insulated gate overlying the channel region. One of the source and drain is directly coupled to the island-shaped layer, while the other of them is contacted with a corresponding data-transfer line (bit line) associated therewith.

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IEDM 85, Buried Storage Electrode (BSE) Cell for Megabit Drams, pp. 710-713 M. Sakamoto, et al.
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