Method for forming tapered polysilicon plug and plug formed

Details Method for forming tapered polysilicon plug and plug formed Method for forming tapered polysilicon plug and plug formed

1996-10-16

1999-08-17

Eisenschenk, Frank C.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438639, 438672, 438701, 438733, 216 58, 257756, H01L 2100, H01L 2128, H01L 2144

Patent

active

059407310

ABSTRACT:
The present invention provides a method of forming a tapered polysilicon contact plug having reduced dimensions beyond the normal resolution limit of a photolithographic method by utilizing at least one polysilicon sidewall spacer as a mask in an anisotropic etching process of an oxide layer such that a contact window of reduced dimensions can be formed for the subsequent deposition of a heavily-doped polysilicon for forming the contact plug.

REFERENCES:
patent: 4698128 (1987-10-01), Berglund et al.
patent: 4902377 (1990-02-01), Berglund et al.
patent: 5294296 (1994-03-01), Yoon et al.
patent: 5517710 (1996-05-01), Boyd et al.
patent: 5567270 (1996-10-01), Liu
patent: 5668051 (1997-09-01), Chen
patent: 5677242 (1997-10-01), Aisou
patent: 5677557 (1997-10-01), Wuu et al.
patent: 5719089 (1998-02-01), Cherng et al.

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