Gallium antimonide complementary HFET

Details Gallium antimonide complementary HFET Gallium antimonide complementary HFET

1996-10-11

1999-08-17

Booth, Richard A

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438167, 438604, 438606, H01L 21337, H01L 218252

Patent

active

059406950

ABSTRACT:
A complementary heterojunction field effect transistor (CHFET) in which the channels for the p-FET device and the n-FET device forming the complementary FET are formed from gallium antimonide (GaSb) or indium antimonide (InSb). An n-type HFET structure is grown, for example, by molecular beam epitaxy (MBE) in order to obtain the highest electron or hole mobility. The complementary p-type HFET is formed by p-type doping of a cap layer thereby eliminating the need for two implants for channel doping. In order to reduce the complexity of the process for making the CHFET, a common gold germanium alloy contact is used for both the p and n-type channel devices, thereby eliminating the need for separate ohmic contacts, resulting in a substantial reduction in the number of mask levels and, thus, complexity in fabricating the device.

REFERENCES:
patent: 5192698 (1993-03-01), Schuermeyer et al.
patent: 5214298 (1993-05-01), Yuan et al.
patent: 5223451 (1993-06-01), Kawasaki et al.
patent: 5243206 (1993-09-01), Zhu et al.
patent: 5262335 (1993-11-01), Streit et al.
patent: 5266506 (1993-11-01), Green, Jr.
patent: 5420442 (1995-05-01), Hasenberg et al.
patent: 5429963 (1995-07-01), Martinez et al.
patent: 5444016 (1995-08-01), Abrokwah et al.
patent: 5455429 (1995-10-01), Paoli et al.
patent: 5479033 (1995-12-01), Baca et al.
patent: 5480829 (1996-01-01), Abrokwah et al.

Affiliated with

Also associated with

Rating

Gallium antimonide complementary HFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gallium antimonide complementary HFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium antimonide complementary HFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-324992