Production method for a thin film semiconductor device with an a

Details Production method for a thin film semiconductor device with an a Production method for a thin film semiconductor device with an a

1997-04-23

1999-08-17

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 257 66, 257 70, H01L 21265

Patent

active

059406909

ABSTRACT:
An amorphous semiconductor film having a thickness of 400 .ANG. or more is formed on an insulating surface and is wholly or selectively etched to form a region having a thickness of 300 .ANG. or less. This is used as a channel-forming region in a TFT.

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