Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1994-10-31

1998-01-13

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566561, 156657, 1566431, 1566621, H01L 21302

Patent

active

057074879

ABSTRACT:
According to this invention, a method of manufacturing a semiconductor device includes the steps of forming a carbon film on a surface of a substrate, forming a mask pattern on the carbon film, etching the carbon film along the mask pattern to form a carbon film pattern, and reactive ion etching the substrate along the carbon film pattern using a high density plasma produced by application of a high frequency and a magnetic field, application of a microwave, irradiation of an electron beam, application of a high frequency of not less than 27 MHz, or application of a inductive coupled high frequency.

REFERENCES:
patent: 4496448 (1985-01-01), King et al.
patent: 4592800 (1986-06-01), Landau et al.
patent: 4620898 (1986-11-01), Banks et al.
patent: 4704342 (1987-11-01), Lehrer
patent: 4820611 (1989-04-01), Arnold et al.
patent: 4904338 (1990-02-01), Kozicki
patent: 4956043 (1990-09-01), Kanetomo et al.
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 5022959 (1991-06-01), Itoh et al.
patent: 5102498 (1992-04-01), Itoh et al.
patent: 5147500 (1992-09-01), Tachi et al.
patent: 5240554 (1993-08-01), Hori et al.
"Microwave Plasma Etching of Silicon and Silica In Halogen Mixtures", J. Vac. Sci. Tech., B (1989), 7(1); pp. 59-67; Pelletien et al.
1990 Dry Process Symposium; pp. 105-109; 1990, T. Ohiwa, et al., "SiO.sub.2 Tapered Etching Employing Magnetron Discharge".
J. Electrochem. Soc.; vol. 136, No. 4; Apr. 1989; pp. 1181-1185; T.R. Pampalone, et al.; "Improved Photoresist Patterning Over Reflective Topographies Using Titanium Oxynitride Antireflection Coatings".
J. Appl. Phys.; vol. 60, No. 3; Mar. 1979; pp. 1212-1214; H.A.M. Van Den Berg, et al.; "Antireflection Coatings on Metal Layers for Photolithographic Purposes".
IBM Technical Disclosure Bulletin; vol. 30, No. 10; Mar. 1988; pp. 402-406; "Carbonized Resist as Directly-Patternable Mask Absorber".
Fiz Technik Datenbank Frankfurt; Abstract AN 2605230; "Hard Carbon Coatings for IR Optical and Heavy Duty Application".
Journal of Technical Disclosure; No. 78-2427, vol. 3-12; Dec. 12, 1978.
"Webster's I New Riverside University Dictionary"; C 1984; Houghton Mifflin Co; Boston, MA; p. 970.
IBM Technical Disclosure Bulletin, vol. 27, No. 7A, Dec. 1984, p. 4102, K.L. Holland, et al., "Polyimide Adhesion to Pre-Treated Silicon Nitride Surfaces".
J. Vac. Sci. Technol. A4(3), May/Jun. 1986, pp. 698-699, V. Vukanovic et al., "Summary Abstract: Polyimide Etching and Passivation Downstream of an O2-CF4-AR Microwave Plasma".
Solid State Technology, Apr. 1985, pp. 243-246, M.L. Hill, et al., "Advantages of Magnetron Etching".
Japanese Journal of Applied Physics, vol. 28, No. 11, Nov. 1989, pp. 2362-2367, S. Noda, et al., "MOS Gate Etching Using an Advanced Magnetron Etching System".
Japanese Journal of Applied Physics, vol. 29, No. 10, Oct. 1990, pp. 2229-2235, K. Ono, et al., "Plasma Chemical View of Magnetron and Reactive Ion Etching of Si With CL2".
Solid State Technology, Feb. 1988, pp. 67-71, R.R. Burke, et al., "Microwave Multipolar Plasma for Etching and Deposition".
J. Vac. Sci. Techol. B 6(6), Nov./Dec. 1988, pp. 1626-1631, Jin-Zhong Yu, "High-Rate Ion Etching of GaAs and Si at Low Ion Energy by Using an Electron Beam Excited Plasma System".
J. Vac. Sci. Technol. B6(1), Jan./Feb. 1988, pp. 284-287, R. Lossy, et al., "Characterization of a Reactive Broad Beam Radio-Frequency Ion Source".
Appl. Phys. Lett. 55(2), Jul. 10, 1989, pp. 148-150, A.J. Perry, et al., "Fast Anisotropic et Etching of Silicon in an Inductively Coupled Plasma Reactor".
Toshiba Review No. 143, Spring 1983, pp. 31-35, H. Okano, et al., "High-Rate Reactive Ion Etching Technology".
J. Appl. Phys. 65(2), Jan. 15, 1989, pp. 464-467, M.J. Cooke, "Anisotropy Control in CF4 Microwave Plasma Etching".

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-323214