Method and apparatus for facilitating removal of material from t

Details Method and apparatus for facilitating removal of material from t Method and apparatus for facilitating removal of material from t

1995-12-20

1998-01-13

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 216 67, H01L 2100

Patent

active

057074852

ABSTRACT:
The present invention is a method and apparatus, particularly adaptable to plasma etchers having horizontal base electrodes, for removing films such as silicon nitride from the backside of semiconductor wafers without leaving unetched residue or bumps thereon. Following the loading of a wafer in a plasma etch chamber, the wafer is positioned above the base electrode and within an etchant plasma for a period of time, with all portions of the front side surface and all portions of the back side surface of the wafer being subjected to the plasma for at least a portion of the period.

REFERENCES:
patent: 4624728 (1986-11-01), Bithell et al.
patent: 4908095 (1990-03-01), Kagatsume et al.
patent: 5075256 (1991-12-01), Wang et al.

Affiliated with

Also associated with

Rating

Method and apparatus for facilitating removal of material from t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for facilitating removal of material from t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for facilitating removal of material from t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-323202