Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1998-07-08
1999-08-17
Le, Vu A.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
36518911, 36523006, G11C 700
Patent
active
059403330
ABSTRACT:
A recursive voltage booster circuit is provided for generating a boosted output voltage to be higher than the low power supply potential to drive control gates via row decoder circuits and wordlines in an array of Flash EEPROM memory cells during a Read mode of operation. The voltage booster circuit includes a plurality of recursively connected boosting stages. The lower power supply potential has a voltage of +2.0 volts or lower. The boosted output voltage is significantly higher than what is traditionally available so as to enable reading of Flash EEPROM memory cells in a very low power supply voltage environment.
REFERENCES:
patent: 5396463 (1995-03-01), Kim et al.
patent: 5499217 (1996-03-01), Pascucci et al.
Advanced Micro Devices , Inc.
Chin Davis
Le Vu A.
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