Rectifying transfer gate circuit

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36478602, 326 58, 326 66, 326110, 326117, 307443, 365175, 365207, G06F 750

Patent

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058222359

ABSTRACT:
A rectifying transfer gate circuit includes first and second field effect transistors and one diode. The source of the first field effect transistor is coupled to a first input node and the gate thereof is coupled to a second input node. Meanwhile, the source of the second field effect transistor is coupled to the second input node and the gate thereof is coupled to the first input node. The diode is coupled between the common drain of the first and second field effect transistors and an output node, so as to increase the speed of the operation in the application circuit utilizing the above rectifying transfer gate circuit.

REFERENCES:
patent: 3746893 (1973-07-01), De Bretagne
patent: 4253162 (1981-02-01), Hollingsworth
patent: 4397000 (1983-08-01), Nagami
patent: 4661723 (1987-04-01), Masuda et al.
patent: 4788460 (1988-11-01), Kobatake
patent: 4999517 (1991-03-01), Yamazaki
patent: 5132569 (1992-07-01), Matsuda
patent: 5604429 (1997-02-01), Nakashima

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