Super low profile package with stacked dies

Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With heat sink embedded in encapsulant

Reexamination Certificate

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Details

C257S676000, C257S777000, C257S778000, C257S707000

Reexamination Certificate

active

06731015

ABSTRACT:

This application incorporates by reference Taiwanese application Serial No. 90118812, Filed Aug. 1, 2001.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates in general to a package for integrated circuits and more particularly to a super low profile package with stacked dies.
2. Description of the Related Art
The technology of integrated circuit (IC) has been usually applied in the various electronic products. The current trend of the electronic products is towards the smaller, thinner, and lighter. Therefore, one important research of IC design focuses on how to improve and minimize the size of the IC package so as to fit in with those smaller electronic products.
Since the integrated circuit (IC) design becomes more and more delicate and complicated, the package with double dies has been commonly adopted for meeting the requirement of the IC design. Typically, the packages could be divided into “cavity up” packages and “cavity down” packages in accordance with the way of die attachment. Please refer to
FIG. 1
, which is a cross-sectional view of a conventional cavity-up package with double dies. The die
102
is attached to the top surface
106
of the substrate
101
while the die
104
is attached on the die
102
by a thin layer of thermally conductive epoxy. The dies
102
and
104
are electrically connected to the substrate
101
by the wires
114
and
116
, respectively. The molding compound
110
is formed over the substrate
101
so as to encapsulate the dies
102
and
104
. A number of solder balls
112
are attached to the bottom surface
108
of the substrate
101
for electrically connecting the package
100
to an external printed circuit board (PCB) (not shown in FIG.
1
).
FIG. 2
is a cross-sectional view of a conventional cavity-down package with double dies. The package
200
with double dies of
FIG. 2
is constructed in accordance with the single-die package design disclosed in U.S. Pat. No. 5,397,921, entitled “TAB Grid Array”, issued Mar. 14, 1995 to Advanced Semiconductor Assembly Technology. The substrate
201
of the package
200
comprises the dielectric layers
201
A and
201
C, and the pad (conductor) layer
201
B. The substrate
201
further has a cavity, through the dielectric layers
201
A,
201
B and the pad layer
201
B, for placing the die
202
. In addition, there is a heat spreader
218
attached to the substrate
201
by a thin film layer of adhesive
220
. Also, the heat spreader
218
has a cavity for placing the dies
202
and
204
, while the die
204
is attached to the heat spreader
218
and the die
202
is attached to the die
204
both by a thin layer of thermally conductive epoxy. Simultaneously, the dies
202
and
204
are wire-bonded to the pad layer
201
B for achieving the electrically connection. Furthermore, the cavity is filled with an encapsulation material (molding compound)
210
for encapsulating the dies
202
and
204
. The numerous solder balls
212
are attached to the dielectric layer
201
C of the substrate
201
for electrically connecting the integrated circuit to metallic traces on an external PCB (not shown in FIG.
2
).
According to the description above, the overall thickness of the package
100
in
FIG. 1
is equal to the sum of the thickness of the molding compound
110
, the thickness of the substrate
101
, and the height of the solder ball
112
, wherein the thickness of the molding compound
110
is positively related to the thickness of the dies
102
and
104
, and the loop height of the wire
116
. Similarly, the overall thickness of the package
200
in
FIG. 2
is determined by the thickness of the heat spreader
218
, the thickness of the substrate
201
, and the height of the solder ball
212
, wherein the thickness of the heat spreader
218
is positively related to the thickness of the dies
202
and
204
. Since the thickness of the dies
102
,
104
,
202
, and
204
directly relate to the overall thickness (profile) of the packages
100
and
200
, the packages
100
and
200
encapsulated with the over-thick dies
102
,
104
,
202
, and
204
can not well fit in with the small and delicate electronic products.
FIG. 3
is a cross-sectional view of another conventional package with double dies. The package
300
with double dies in
FIG. 3
is constructed in accordance with the single-die package design disclosed in U.S. Pat. No. 5,696,666, entitled “Low Profile Exposed Die Chip Carrier Package”, issued Dec. 9, 1997 to Motorola, Inc. The substrate
301
of the package
300
in
FIG. 3
has an open-through cavity
320
for placing the die
302
. The die
304
is mounted on the die
302
by a thin film of the conductive epoxy. The dies
302
and
304
are electrically connected to the substrate
301
by the wires
314
and
316
, respectively. After wire bonding, an encapsulation material (encapsulant or molding compound) is applied over the top surface
306
of the substrate
301
, thereby encapsulates the dies
302
and
304
. Also, the solder balls
312
are attached to the bottom surface
308
of the substrate
301
.
FIG.
4
A~
FIG. 4D
show the process of manufacturing the package of FIG.
3
. First, a cavity
320
is formed through the substrate
301
, and the bottom surface
308
of the substrate
301
is temporarily taped by a tape
432
in order to seal one side of the cavity
320
, as shown in FIG.
4
A.
Next, the die
302
is seated in the cavity
302
and carried by the tape
432
, as shown in FIG.
4
B. In other words, the tape
432
provides the mechanical support for the die
302
. Then, the die
304
is attached on the top of the die
302
by a conductive epoxy. The dies
302
and
304
are respectively wire-bonded to the substrate
301
through the wires
314
and
316
. After wire bonding, the encapsulation material, such as a plastic resin, is applied in the peripheral of the dies
302
and
304
in place, so that the dies
302
and
304
are encapsulated and well held in the cavity
320
.
Since the die
302
is well fixed in the cavity
320
after encapsulating process, there is no need for using the tape
432
as a carrier of the die
302
. So, the de-taping procedure, which is the removal of the tape
432
, can be performed as shown in FIG.
4
C. Accordingly, the back surface
302
A of the die
302
is exposed to the atmosphere.
After de-taping, the solder ball attachment is performed as shown in FIG.
4
D. Numerous solder balls
312
are attached to the bottom surface
308
of the substrate
301
as an array format, and the package
300
in
FIG. 3
is thereby obtained in accordance with the forgoing process.
Comparatively speaking, the encapsulation material
310
of the package
300
in
FIG. 3
is thinner than the molding compound
110
of the package
100
in
FIG. 1
, which results from the substrate
301
having a capacity (cavity
302
) for the die
302
. So, the overall thickness of the package
300
is smaller than that of the package
100
. However, the integration of the taping and de-taping procedures makes the process of manufacturing package
300
more complicate, which thereby decreases the production efficiency and even increases the prime cost greatly.
SUMMARY OF THE INVENTION
It is therefore an object of the invention to provide a super low profile package with stacked dies and the method of manufacturing the same. The package of the invention possesses small size, thin profile, and good efficiency of heat dissipation. In addition, the process of manufacturing the package of the invention is simplified by eliminating the conventional procedures of taping and de-taping, so that the prime cost is significantly reduced.
The invention achieves the above-identified objects by providing a super low profile package with stacked dies, comprising: a substrate, a heat spreader, a first die, a second die, a molding compound, and a number of solder balls. The substrate has a cavity, a top surface and a bottom surface opposite to the top surface. The heat spreader is connected to the bottom surface of the substrate. A portion of t

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