Storage capacitor having a refractory metal storage electrode an

Details Storage capacitor having a refractory metal storage electrode an Storage capacitor having a refractory metal storage electrode an

1997-02-19

1999-08-17

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257311, 257532, 361303, H01L 4700

Patent

active

059397489

ABSTRACT:
A method of forming a storage electrode on a silicon oxide layer is provided wherein a titanium nitride barrier metal layer is formed on an entire surface of the insulation layer. A tungsten storage electrode film is formed on an entire surface of the titanium nitride barrier metal layer. A titanium nitride etch back stopper film is formed on an entire surface of the storage electrode film. The etch back stopper film and the storage electrode film are selectively removed by a dry etching to define a storage electrode body, but leave the barrier metal layer over the entire surface of the silicon oxide layer. A tungsten side wall electrode film is entirely formed. The side wall electrode film is selectively removed by an etch back whereby the side wall electrode films remain only on the side walls of the storage electrode body. The etch back stopper film and the barrier metal layer are selectively removed whereby a storage electrode is formed which comprises the barrier metal layer, the storage electrode body extending over the barrier metal layer except on a peripheral region thereof and the side wall electrode films in contact with the side walls of the storage electrode body and over the peripheral region of the barrier metal layer.

REFERENCES:
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5442213 (1995-08-01), Okudaira et al.
patent: 5567964 (1996-10-01), Kashihara et al.
patent: 5729054 (1998-03-01), Summerfelt et al.

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