Semiconductor memory device and manufacturing method of the same

Details Semiconductor memory device and manufacturing method of the same Semiconductor memory device and manufacturing method of the same

1996-12-12

1999-08-17

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257308, H01L 27108

Patent

active

059397462

ABSTRACT:
A storage node electrode is connected to a contact plug via an upper node contact hole. A lower cell plate electrode composed of an N type silicon film and an N type silicon film spacer is covered by the storage node electrode via a titanium oxide film as a lower capacitive insulating film and an upper cell plate electrode composed of an N type silicon film connected to the lower cell plate electrode covers the storage node electrode via a titanium oxide film as an upper capacitive insulating film. Thus, in a DRAM having a stacked and COB type memory, a surface ratio of the storage node electrode, contributing to a capacitor, is increased.

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patent: 5444278 (1995-08-01), Katayama
patent: 5497016 (1996-03-01), Kohn
patent: 5604696 (1997-02-01), Takaishi
patent: 5608248 (1997-03-01), Ohno
patent: 5686747 (1997-11-01), Jost et al.
patent: 5693970 (1997-12-01), Ikemasu

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