Transistor and semiconductor device

Details Transistor and semiconductor device Transistor and semiconductor device

1997-01-06

1998-10-13

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257365, 257392, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058215883

ABSTRACT:
An object of the invention is to provide a transistor in which the channel length of the transistor is changed depending on voltages applied to plural gate electrodes which are dividedly formed, and plural kinds of operation states are attained. In a MOS transistor 31, a second gate electrode 36 is formed via an insulating film 35 on a first gate electrode 34 formed in a region E2. The channel length formed in a semiconductor substrate 32 is determined in accordance with the combination of voltages applied to the first and second gate electrodes 34 and 36. The MOS transistor 31 can operate in either of states of different threshold voltages.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4330850 (1982-05-01), Jacobs et al.
patent: 4503519 (1985-03-01), Arakawa
patent: 4652897 (1987-03-01), Okuyama et al.
patent: 4716446 (1987-12-01), Esser et al.
patent: 5252847 (1993-10-01), Arima et al.
patent: 5402371 (1995-03-01), Ono
patent: 5477068 (1995-12-01), Ozawa

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