Semiconductor memory having a memory cell including a capacitor

Details Semiconductor memory having a memory cell including a capacitor Semiconductor memory having a memory cell including a capacitor

1993-05-26

1994-08-30

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257607, H01L 2968, H01L 2978, H01L 2992

Patent

active

053430620

ABSTRACT:
A semiconductor memory having a memory cell including a stacked capacitor in which a lower electrode contacting one of two diffusion regions of an access transistor is formed in the form of two layers. It is preferable that impurities having a smaller diffusion coefficient, or arsenic is introduced into a first layer of the lower electrode contacting the diffusion region, and impurities having a larger diffusion coefficient, or phosphorus is introduced into a second layer of the lower electrode contacting capacitor dielectric film. Since a diffusion coefficient of arsenic is small, it is possible to prevent the junction of the diffusion region from becoming deep and on the other hand since phosphorus is introduced into the second polycrystalline Si film contacting the capacitor dielectric film, it is possible to prevent the degradation of the film quality of the capacitor dielectric film.

REFERENCES:
patent: 5017982 (1991-05-01), Kobayashi
patent: 5101251 (1992-03-01), Wakamiya et al.

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