Method of forming multi-layer wiring utilizing SOG

Details Method of forming multi-layer wiring utilizing SOG Method of forming multi-layer wiring utilizing SOG

1996-07-12

1998-10-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438781, 438787, H01L 214763

Patent

active

058211624

ABSTRACT:
On a first insulating film covering a substrate, wiring layer patterns are formed. Thereafter, a second insulating film of plasma CVD--SiO.sub.2 or the like is formed thereon. A hydrogen silsesquioxane resin film having a flat surface is spin-coated on the second insulating film. Thereafter, the resin film is subjected to a first heat treatment in an inert gas atmosphere to convert the resin film into a silicon oxide film of a preceramic phase. This preceramic silicon oxide film is subjected to a second heat treatment in an oxidizing atmosphere to convert this preceramic silicon oxide film into a silicon oxide film of a ceramic phase. In this case, a fine size projection is generated on the surface of the ceramic silicon oxide film. On the ceramic silicon oxide film, a third insulating film of plasma CVD--PSG or the like is formed which does not reflect the fine size projection. Thereafter, a fourth insulating film of plasma CVD--SiO.sub.2 is formed, followed by formation of a second wiring layer. It is possible to planarize an interlevel insulating film and improve a process yield.

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